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市场调查报告书

内存技术的变形:新技术带来的新的市场机会及新问题

The Changing Face of Memory Technologies: New Technologies Drive New Opportunities - And Create New Problems

出版商 IDC 商品编码 345136
出版日期 内容信息 英文 26 Pages
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内存技术的变形:新技术带来的新的市场机会及新问题 The Changing Face of Memory Technologies: New Technologies Drive New Opportunities - And Create New Problems
出版日期: 2016年05月06日 内容信息: 英文 26 Pages

本报告已在2018年07月02日停止出版

简介

本报告提供主要系统OEM处理的各种的内存/储存阶层的选项相关验证,现况与展望相关的系统性信息。

IDC的见解

调查概要

概况

  • 现状
    • 主流的DRAM部门:制造中显著的改变
    • LPDDR内存:崭露头角
    • 堆叠内存:更智能的DDR的选项
    • NAND:期待大,不过,NAND有独有问题

未来展望

  • RAM的可能性扩大的新的全球
    • 阻力变化型RAM (RRAM,ReRAM)
    • 磁电阻式内存 (MRAM,T-MRAM,ST-MRAM,STT-MRAM,TAS-MRAM,VMRAM)
    • 相位改变RAM (PRAM,PCRAM)
    • 至少一个以上,改变局势的可能性
    • 架构观点的内存的新趋势
      • 处理器层级的内存开发
      • 提高缓存的限制
      • SSD:替代旋转型硬盘的气势

主要的建议

  • 缓冲
  • 变得更深的内存阶层
  • 异种架构
  • 多重处理器
  • 并列编程的范例

参考数据

  • 相关数据
  • 摘要
目录
Product Code: US41212215

This IDC study reviews the different memory and storage options that are being explored by the major system OEMs. Myriad market and technology forces are aligning to bring about some drastic changes in almost every sector of the memory field, and these changes will have a deep and abiding impact on the way that high-performance computing (HPC) systems are designed, built, and used in the coming years. Developments of particular note include the emergence of low-power DRAMs as the dominant DRAM device, looming performance issues in NAND flash development, and the explosion of new architectures to address growing concerns with the continued scaling of electron-charged memory devices. In addition, new technologies such as embedded cache, burst buffers, and SSDs are expanding options for more sophisticated memory/storage hierarchies."The bulk of new or evolving memory/storage developments promise new opportunities for faster, more effective data storage and movement, but almost all carry with them some - and in more than a few cases, significant - design and use complexities," says Bob Sorensen, research VP, Technical Computing.

IDC Opinion

In This Study

Situation Overview

  • Current Status
    • The Mainstream DRAM Sector: A Sea Change in the Making
    • LPDDR Memory: Coming to the Fore
    • Stacked Memory: Options for Smarter DDRs
    • NAND - Lots of Promise, But It Has Issues of Its Own

Future Outlook

  • A New World of RAM Possibilities
    • Resistive RAM (RRAM, ReRAM)
    • Magnetoresistive RAM (MRAM, T-MRAM, ST-MRAM, STT-MRAM, TAS-MRAM, VMRAM)
    • Phase-Change RAM (PRAM, PCRAM, PCM)
    • … And At Least One Potential Game Changer
    • New Trends in Memory from an Architectural Perspective
      • Memory Developments at the Processor Level
      • Raising the Bar on Caching
      • SSD: Looking to Replace Spinning Disk

Essential Guidance

  • Cache
  • Deeper Memory Hierarchies
  • Heterogeneous Architectures
  • Multiprocessors
  • Parallel Programming Paradigms

Learn More

  • Related Research
  • Synopsis
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