高频 (RF) 功率半导体
RF Power Semiconductors Market Data: Silicon, Gallium Nitride, and Gallium Arsenide High Power RF Devices
|出版日期||内容资讯||英文 18 Tables, 18 Charts
|高频 (RF) 功率半导体 RF Power Semiconductors Market Data: Silicon, Gallium Nitride, and Gallium Arsenide High Power RF Devices|
|出版日期: 2019年05月01日||内容资讯: 英文 18 Tables, 18 Charts||
本报告提供全球高频功率半导体 (电力半导体，输出功率3瓦以上，频率4GHz以上)的市场结构、趋势相关分析，目前使用案例，及市场规模趋势预测，各市场区隔/各技术/各供应商市场占有率，GaN (氮化镓) 高频功率半导体的使用概况 等调查。
A myriad of products and services utilize RF power amplifiers in their transmitter circuitry: wireless infrastructure for cell phones and other mobile devices; radio and television broadcasting; medical equipment such as MRI machines; materials curing that includes carpet fibers and plywood; radar; space and satellite communications; police and fire radios; and military communications and electronics of all kinds. Most of these transmitters use semiconductors in the RF power amplifier output stages. Even modern, extremely high-power broadcast transmitters that traditionally have used large vacuum tubes in their RF sections have finally begun to use solid-state devices.
This study examines RF power semiconductor devices that have power outputs of greater than three watts and operate at frequencies of up to 4 GHz, which represent the bulk of applications in use today. Both silicon based and gallium based devices are covered.