RF Power Semiconductor Devices for Mobile and Wireless Infrastructure
|出版日期||内容资讯||英文 16 Pages
|行动·无线基础设施用RF功率半导体设备 RF Power Semiconductor Devices for Mobile and Wireless Infrastructure|
|出版日期: 2019年07月30日||内容资讯: 英文 16 Pages||
本报告涵括RF功率半导体市场，阐明RF功率半导体和RF功率放大器的互相依存关系，扩大中的中国·亚太地区市场相关讨论与资料，氮化镓 (GaN) 设备对未来RFPA半导体设备市场的影响之相关讨论，及行动无线基础设施RF功率半导体的定量预测等系统性资讯。
RF power amplifiers (RFPA) are integral parts of all basestations for cellular and mobile wireless infrastructure. They represent one of the most expensive component sub-assemblies in modern wireless infrastructure equipment, and both their performance and cost are important drivers in basestation design. Efficiency, physical size, linearity, and reliability are among the principal concerns. As price pressures become fiercer, new and innovative techniques and materials must be used to reduce the cost of this important component part while still maintaining performance.
The RF power semiconductors used in these power amplifiers are the linchpin for their cost and capability, and they must keep pace with both the economic and technical realities facing designers and users of these RF power amplifiers.
This application note examines all of the above topics and illuminates the interdependent relationship of RF power semiconductors to RF power amplifiers. Included are discussions and data on the expanding China and Asia-Pacific marketplace, as well as a discussion on how gallium nitride (GaN) devices will affect the future of the RFPA semiconductor device market. RF power semiconductor drivers for 5G NR low-band and mid-band are also discussed. Quantitative forecasts are presented through 2024 for RF power semiconductors for mobile wireless infrastructure.
Additionally, the present trade/tariiff issues and other international pressures are discussed within the context of this market place.