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[英文调查报告书]

宽能隙电子产品:技术动向及市场预测(2008年)

Wide Bandgap Electronics: Technology Trends and Market Forecasts - 2008

商品编码 : 62816
出版日期 : 2008/02

Price

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此出版品为英文撰写

Abstract

Gallium nitride-based electronic devices are finally commercial, years after the success of GaN-based LEDs and lasers. Electronic devices based on GaN is the superior technology for many applications in high-power RF, high-voltage and high-power electronics, and high-temperature environments. But, without a volume application to drive down the manufacturing cost, the price remains high. That may now change, as GaN device suppliers eye WiMAX base station power amplifiers and other applications as volume markets drive lower costs.

Strategies Unlimited is pleased to offer this update of the GaN electronics market, with special emphasis this year on application trends and pricing. We offer a model for projecting future prices, along with three possible scenarios. One scenario assumes that breakthroughs in epitaxy quality lead to one pricing path and some volume applications. Another assumes a more moderate pricing path, with some selective successes. A third assumes that pricing will continue more or less as the status quo, with only moderate growth but lucrative niche products.

Highlights

R&D ISSUES AND TECHNOLOGY DEVELOPMENTS are reviewed along with the status of the technology emphasizing major breakthroughs that have occurred.

Research activities are highlighted for deposited and bulk crystal growth for:

  • SiC
  • GaN
  • AlN

Key applications include:

  • Microwave Communications
  • Power Electronics
  • High-Temperature Environments
  • Military and Space
  • Aircraft and Automotive
  • Industrial
  • Consumer

MARKET FORECAST of the worldwide wide bandgap electronics component market for 2007-2012.

MAJOR INDUSTRIAL SUPPLIERS and potential suppliers are profiled.

UNIVERSITIES/RESEARCH CENTERS with active substrate development programs are identified with key contacts noted.

GOVERNMENT AGENCIES promoting substrate development are listed.

A BIBLIOGRAPHY with references to some of the most significant advances in GaN, SiC, and AlN material and device technology since 2005 is presented.

Table of Contents

1. EXECUTIVE SUMMARY

  • 1.1 Overview
  • 1.2 Technology Summary
  • 1.3 Application and Market Forecast Summary
  • 1.4 Summary of Major Players

2. TECHNOLOGY

  • 2.1 Basic Materials Properties
  • 2.2 Lattice Mismatch with GaN
  • 2.3 Material comparisons
    • 2.3.1 High-Frequency
    • 2.3.2 High-Temperature
    • 2.3.3 High-Power
    • 2.3.4 Advantages of Using GaN
    • 2.3.5 Critical Parameters
    • 2.3.6 Figures of Merit
  • 2.4 High-Priority Technology Challenges
    • 2.4.1 Substrates
    • 2.4.2 Device/Design Structure
    • 2.4.3 Packaging
    • 2.4.4 P-Type Doping
    • 2.4.5 Contacts
    • 2.4.6 Reliability
    • 2.4.7 Thin-Film Deposition/Epitaxy
    • 2.4.8 Buffer-Layer Composition/Formation
    • 2.4.9 Photolithography
    • 2.4.10 Etching

3. ELECTRONIC DEVICE TYPES

  • 3.1 HEMTs/HFETs
  • 3.2 MESFETs
  • 3.3 MOSFETs
  • 3.4 BJTs/HBTs
  • 3.5 Schottky Diodes/Rectifiers/Thyristors
  • 3.6 Piezoelectric/Pyroelectric Sensors
  • 3.7 PIN Diodes
  • 3.8 GaN/SiC MMICs (Monolithic Microwave ICs)
  • 3.9 Record Performance

4. Widebandgap Electronics Applications

  • 4.1 Market Segments by Feature
  • 4.2 High-Power Microwave Electronics
    • 4.2.1 The microwave electronics landscape
    • 4.2.2 Competing microwave electronics technologies
    • 4.2.3 Cellular base stations
    • 4.2.4 WiMAX and other wireless MAN base stations
    • 4.2.5 Other communications applications
      • Satellite transponders
      • Wireless backhaul and point-to-point microwave
      • Wi-Fi and new wireless LAN bands
      • Digital broadcast TV
  • 4.2.6 Radar
    • Phased array antennas
    • Auto collision avoidance
  • 4.2.7 Military
    • Electronic warfare
    • Microwave bombs
    • Non-lethal microwave guns
  • 4.2.8 Microwave ovens and other ISM applications
    • Microwave ovens
    • Test and measurement equipment
    • Other exotic applications
  • 4.2.9 Total available market for widebandgap microwave electronics
  • 4.3 High-Power and High-Voltage Systems
    • 4.3.1 The power management landscape
    • 4.3.2 Power management applications
    • 4.3.3 High-power and high-voltage components
    • 4.3.4 The widebandgap device alternatives
    • 4.3.5 High-power component pricing
  • 4.4 High-Temperature (Harsh) Environments
  • 4.5 Summary of TAM Forecasts
  • 4.6 Applications Overview by Industry
    • 4.6.1 Commercial communications
    • 4.6.2 Military
    • 4.6.3 Spacecraft
    • 4.6.4 Aircraft
    • 4.6.5 Automotive
    • 4.6.6 Industrial and energy
    • 4.6.7 Consumer and office
    • 4.6.8 Breakdown of TAM by end-user sector

5. Widebandgap Electronics Market Forecast

  • 5.1 Defect Density Forecast
  • 5.2 Linking Prices and Unit Volumes
  • 5.3 Three Scenarios
  • 5.4 Forecast by Market Segment, 2007-2012
  • 5.5 Revenue Forecast by Material Type
  • 5.6 Supplier Market Shares
  • 5.7 Wafer Size and Supplier Strategy

6. Mini-Profiles of Major Players

  • 6.1 Companies
  • 6.2 Research Centers and Universities
  • 6.3 Government Agencies

7. Bibliography

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此出版品为英文撰写

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[英文调查报告书]
宽能隙电子产品:技术动向及市场预测(2008年)
Wide Bandgap Electronics: Technology Trends and Market Forecasts - 2008

出版商 : Strategies Unlimited Strategies Unlimited
代理商 : Global Information, Inc. Global Information, Inc.

US $ 4,250 (Hard Copy)
US $ 5,450 (Hard Copy + PDF by E-Mail (Single User License))
US $ 5,450 (PDF on CD-ROM (Single User License) & Hard Copy)
商品编码 : 62816

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